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Semiconductor Devices: Physics and Technology, 2nd Edition
Simon M. Sze,
UMC Chair Professor, National Chiao Tung Univ., National Nano Device Laboratories, Hsinchu, Taiwan
ISBN: 978-0-471-33372-2
©2002
576 pages
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Detailed Contents
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Preface.
Introduction.
PART I: SEMICONDUCTOR PHYSICS.
Energy Bands and Carrier Concentration in Thermal Equilibrium.
Carrier Transport Phenomena.
PART II: SEMICONDUCTOR DEVICES.
p-n Junction.
Bipolar Transistor and Related Devices.
MOSFET and Related Devices.
MESFET and Related Devices.
Microwave Diodes, Quantum-Effect, and Hot-Electron Devices.
Photonic Devices.
PART III: SEMICONDUCTOR TECHNOLOGY.
Crystal Growth and Epitaxy.
Film Formation.
Lithography and Etching.
Impurity Doping.
Integrated Devices.
Appendix A: List of Symbols.
Appendix B: International Systems of Units (SI Units).
Appendix C: Unit Prefixes.
Appendix D: Greek Alphabet.
Appendix E: Physical Constants.
Appendix F: Properties of Important Element and Binary Compound Semiconductors at 300 K.
Appendix G: Properties of Si and GaAs at 300 K.
Appendix H: Derivation of the Density of States in Semiconductor.
Appendix I: Derivation of Recombination Rate for Indirect Recombination.
Appendix J: Calculation of the Transmission Coefficient for a Symmetric Resonant-Tunneling Diode.
Appendix K: Basic Kinetic Theory of Gases.
Appendix L: Answers to Selected Problems.
Index.
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