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Device Electronics for Integrated Circuits, 3rd Edition
Richard S. Muller,
Univ. of California, Berkeley
Theodore I. Kamins,
Hewlett-Packard Laboratories, Palo Alto, California, and Stanford Univ., California
ISBN: 978-0-471-59398-0
©2003
560 pages
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New to This Edition
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- Updated MOSFET material: The authors have thoroughly revised and enhanced their coverage of MOSFETs and CMOS to bring up-to-date their coverage of these central topics in IC electronics. Their discussion brings the reader step-by-step from the basic MOSFET long-channel theory to models that describe the submicron-channel MOSFETS of today's megatransistor chips. A thorough discussion of high-field effects comprises the new Chapter 10.
- Additional coverage of current topics: The authors have updated the material on IC technology and added an overview of IC scaling trends in Chapter 2. The material on process simulation has been significantly expanded, and a brief discussion of compound semiconductors has been added, also in Chapter 2. Chapter 5 now includes a section on device simulation.
- New material on heterostructures and heterojunction devices: Material on heterostructures and heterojunction transistors (especially silicon-germanium devices) has been added to Chapters 4, 5, 6, and 7.
- Gauss' Law Section: Prompted by their experiences in teaching with earlier editions, the authors have added a section (including examples and problems) to Chapter 1 to reinforce applications of Gauss' law and aid the reader in understanding its applications to many device problems.
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